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Performance of RF MEMS switches at low temperatures

Su, H.T. and Llamas-Garro, I. and Lancaster, M.J. and Prest, M. and Park, J.H. and Kim, J.M. and Baek, C.W. and Kim, Y.K. (2006) Performance of RF MEMS switches at low temperatures. Electronics Letters.

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The actuation voltage of microelectromechanical system (MEMS)
metal switches was investigated at temperatures ranging from 10 to 290 K. The investigation shows a 50% increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.

Type of Work:Article
Date:October 2006 (Publication)
Department:School of Electronic, Electrical and Computer Engineering
Subjects:TK Electrical engineering. Electronics Nuclear engineering
Institution:University of Birmingham, Swinburne University of Technology, National Institute for Astrophysics, Optics and Electronics, LG Electronics Institute of Technology, Chung-Ang University
Copyright Holders:IET
ID Code:133
Refereed:YES
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