Su, H.T. and Llamas-Garro, I. and Lancaster, M.J. and Prest, M. and Park, J.H. and Kim, J.M. and Baek, C.W. and Kim, Y.K. (2006) Performance of RF MEMS switches at low temperatures. Electronics Letters.
The actuation voltage of microelectromechanical system (MEMS)
metal switches was investigated at temperatures ranging from 10 to 290 K. The investigation shows a 50% increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.
|Type of Work:||Article|
|Date:||October 2006 (Publication)|
|Department:||School of Electronic, Electrical and Computer Engineering|
|Subjects:||TK Electrical engineering. Electronics Nuclear engineering|
|Institution:||University of Birmingham, Swinburne University of Technology, National Institute for Astrophysics, Optics and Electronics, LG Electronics Institute of Technology, Chung-Ang University|
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