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Conductance of graphene nanoribbon junctions and the tight binding model

Wu, Y. and Childs, P. A. (2011) Conductance of graphene nanoribbon junctions and the tight binding model. Nanoscale Research Letters, 6. ISSN 1931-7573

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URL of Published Version: http://dx.doi.org/10.1007/s11671-010-9791-y

Identification Number/DOI: doi:10.1007/s11671-010-9791-y

Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding analysis. In this paper, the energy band structure and conductance of graphene nanoribbons and metal/semiconductor junctions are obtained using a third nearest-neighbour tight binding analysis in conjunction with an efficient nonequilibrium Green’s function formalism. We find significant differences in both the energy band structure and conductance obtained with the two approximations.

Type of Work:Article
Date:2011 (Publication)
School/Faculty:Colleges (2008 onwards) > College of Engineering & Physical Sciences
Department:School of Electronic, Electrical and Computer Engineering
Subjects:TK Electrical engineering. Electronics Nuclear engineering
Institution:University of Birmingham
Copyright Holders:The authors
ID Code:802
Refereed:YES
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